We have demonstrated that the thickness of the buffer layer is im

We have demonstrated that the thickness of the buffer layer is important for the crystallization, microstructure, and electrical properties of the subsequently deposited BTO thin film. We have also presented a method to control the orientations of the BTO films either by controlling the thickness of the buffer layers or by modifying the deposition procedure. A

buffer layer of 6 nm is found efficient to prevent secondary-phase formation and to allow high-temperature deposition. The problems associated with the formation of the intercrystal voids have been improved by controlling the process as well as buffer layer parameters. The BTO films deposited on the 7.2-nm-thick lanthanum nitrate buffer click here layer show a relative dielectric constant of 270, a remnant polarization (2P r) of 5 μC/cm2, and a coercive field (E c) of 100 kV/cm, which make it a suitable candidate for future electronic and photonic devices. Although the electrical properties are not as good as reported elsewhere, we believe this is the thinnest buffer layer reported up to now which results DZNeP datasheet in preferentially oriented and well-crystallized BTO thin films. Acknowledgments This research was supported by the Interuniversity Attraction

Poles program of the Belgian Science Policy Office, under grant IAP P7-35 (Photonics@be). References 1. Hongtao X, Pervez NK, York RA: Tunable microwave integrated circuits BST thin film capacitors with device structure optimization. Integr Ferroelectr 2005, 77:27–3535.CrossRef 2. Dicken MJ, Sweatlock LA, Pacifici D, Lezec HJ, Bhattacharya K, Atwater HA: Electrooptic modulation in thin film barium titanate plasmonic interferometers. Nano Lett 2008, 8:4048–4052.CrossRef 3. Bakhoum EG, Cheng MHM: Novel capacitive pressure sensor. J Microelectromechanical Systems 2010, 19:443–450.CrossRef 4. Roy BK, Cho J: Dielectric

properties Niclosamide of solution-deposited crystalline barium titanate thin films. J Am Ceram Soc 2012, 95:1189–1192.CrossRef 5. Xiangyun D, Xiaofen G, Ping C, Chen L, Zhongwen T, Dejun L, BVD-523 order Jianbao L, Xiaohui W, Longtu L: Ferroelectric properties study for nanocgrain barium titanate ceramics. Thin Solid Films 2010, 518:e75-e77.CrossRef 6. Wang DY, Wang J, Chan HLW, Choy CL: Linear electro-optic effect in Ba0.7Sr0.3TiO3 thin film grown on LSAT (001) substrate. Integr Ferroelectr 2007, 88:12.CrossRef 7. Dechakupt T, Ko SW, Lu SG, Randall CA, Trolier-McKinstry S: Processing of chemical solution-deposited BaTiO3-based thin films on Ni foils. J Mater Sci 2011, 46:136–144.CrossRef 8. Chung UC, Michau D, Elissalde C, Li S, Klein A, Maglione M: Evidence of diffusion at BaTiO3/silicon interfaces. Thin Solid Films 2012, 520:1997–2000.CrossRef 9.

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