The authors of [21, 22] studied the quadratic electro-optic effects (QEOEs) and electro-absorption
(EA) process in InGaN/GaN cylinder quantum dots and CdSe-ZnS-CdSe nanoshell structures. They have found that the position of nonlinear susceptibility peak and its amplitude may be tuned by changing the nanostructure configuration. The obtained susceptibilities in these works are around and 10-15 esu, respectively. In reference , Quisinostat price self-focusing effects in wurtzite InGaN/GaN quantum dots are studied. The results of this paper show that the quantum dot size has an immense effect on the nonlinear optical properties of wurtzite InGaN/GaN quantum dots. Also, with decrease of the quantum dot size, the self-focusing effect increases. GS-1101 purchase In a recent paper ,
NSC 683864 mw we have shown that with the control of GaN/AlGaN spherical quantum dot parameters, different behaviors are obtained. For example, with the increase of well width, third-order susceptibility decreases. The aim of this study is to investigate our proposed GaN/AlGaN quantum dot nanostructure from quadratic electro-optic effect and electro-absorption process points of view. In this paper, we study third-order nonlinear susceptibility of GaN/AlGaN semiconductor quantum dot based on the effective mass approximation. The numerical results have shown that in the proposed structure, the third-order nonlinear susceptibilities near 2 to 5 orders of magnitudes are increased. The organization of this paper is as follows. In the ‘Methods’ section, the theoretical model and background are described. The ‘Results and discussion’ section is devoted to the numerical results and discussion. Summarization of numerical results is given in the last section. Methods In this section, theoretical model and mathematical background of the third-order nonlinear properties of a new GaN/AlGaN quantum dot nanostructure are presented. The geometry of a spherical centered defect quantum dot and potential distribution of this nanostructure are shown in Figure 1. We consider three Levetiracetam regions consisting of a spherical well (with radius a), an inner defect shell
(with thickness b - a), and an outer barrier (with radius b). The proposed spherical centered defect quantum dot can be performed by adjusting the aluminum mole fraction. Figure 1 Structure of the spherical quantum dot and related potential distribution. In this paper, the potential in the core region is supposed to be zero, and the potential difference between two materials is constant . There are various methods for investigating electronic structures of quantum dot systems [26–28]. The effective mass approximation is employed in this study. The time-independent Schrödinger equation of the electron in spherical coordinate can be written as . (1) where m i ∗ and V i (r) are effective mass and potential distribution in different regions.