Deep-level emission has been reported to be caused by oxygen vaca

Deep-level emission has been reported to be caused by oxygen vacancies. Therefore, it indicated few oxygen vacancies existing in the ZnO films [14]. Figure 2 Room-temperature PL spectra of ZnO, InGaN, and GaN. The EL spectra of ZnO/InGaN/GaN heterojunction LED under various forward biases are shown in Figure 3a. The EL spectra were collected from the back face of the structure at room temperature. As shown in Figure 3a, with a forward bias of 10 V, a blue emission located at 430 nm was observed. Compared with the PL spectra,

it can CA4P mouse be easily identified that it originated from a recombination in the p-GaN layer. With bias increase, the blue emission peak shifted toward a short wavelength (blueshift). Note that mobility of electrons is faster than holes. Therefore, with low bias, electrons were injected from the n-ZnO side, through the InGaN layer, to the p-GaN

side, and little recombination occurred in the n-ZnO and InGaN layers. With bias increase, some holes can www.selleckchem.com/products/Trichostatin-A.html inject to the n-ZnO side. Hence, the intensity of emission from the ZnO increased, and as a result, the blue emission peak shifted toward a short wavelength. Additionally, with the bias increase, a peak centered at 600 nm was observed, as shown in Figure 3a. Compared with the PL spectra, the peak is not consistent this website with p-GaN, ZnO, and InGaN:Si. The peak under the bias of 40 V is thus fitted with two peaks by Gaussian fitting (Figure 3b). The positions of two peaks are 560 and 610 nm, respectively. The emission peak at 560 nm matches well with the PL spectrum of InGaN:Si. However, ID-8 the emission peak at 610 nm cannot

be found in the PL spectra. The PL emission of intrinsic GaN was at 360 nm, and GaN:Mg changes to 430 nm due to transmission from the conduction band and/or shallow donors to the Mg acceptor doping level. Hence, the peak centered at 610 nm might be from the Mg-doped InGaN layer [17]. Figure 3 EL spectra of ZnO/InGaN/GaN heterojunction LED under forward various biases (a) and multi-peak Gaussian fitting (b). The fitting are from experimental data at the range of 500 to 700 nm. Figure 4 illustrates the possibility of white light from the ZnO/InGaN/GaN heterostructured LEDs by the Commission International de l’Eclairage (CIE) x and y chromaticity diagram. Point D is the equality energy white point, and its CIE chromaticity coordinate is (0.33, 0.33). Because the points from 380 to 420 nm on CIE chromaticity diagram are very close, point A is used to represent the blue emission from p-GaN and ZnO. Points B and C represent emissions from InGaN:Si and InGaN:Mg, respectively. As shown in Figure 4, triangle ABC included the ‘white region’ defined by application standards. Therefore, theoretically speaking, the white light can be generated from the ZnO/InGaN/GaN LED with the appropriate emission intensity ratio of ZnO, InGaN:Si, InGaN:Mg, and p-GaN.

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